Datasheet

PBSS4160DS_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 11 December 2009 3 of 14
NXP Semiconductors
PBSS4160DS
60 V, 1 A NPN/NPN low V
CEsat
(BISS) transistor
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
-290mW
[2]
-370mW
[3]
-450mW
Per device
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
-420mW
[2]
-560mW
[3]
-700mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm
2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
Table 5. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
006aaa493
T
amb
(°C)
0 16012040 80
400
200
600
800
P
tot
(mW)
0
(3)
(2)
(1)