Datasheet

2001 Jul 13 2
NXP Semiconductors Product data sheet
40 V low V
CEsat
NPN transistor
PBSS4140U
FEATURES
• Low collector-emitter saturation voltage
• High current capabilities.
• Improved device reliability due to reduced heat
generation.
• Enhanced performance over SOT231A general purpose
packaged transistors.
APPLICATIONS
• General purpose switching and muting
• LCD backlighting
• Supply line switching circuits
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
NPN low V
CEsat
transistor in a SOT323 plastic package.
PNP complement: PBSS5140U.
MARKING
QUICK REFERENCE DATA
PINNING
TYPE NUMBER MARKING CODE
PBSS4140U 41t
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage 40 V
I
CM
peak collector current 2 A
R
CEsat
equivalent on-resistance <500 mΩ
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
2
3
1
MAM062
3
2
1
Top view
Fig.1 Simplified outline SOT323 and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 40 V
V
CEO
collector-emitter voltage open base − 40 V
V
EBO
emitter-base voltage open collector − 5 V
I
C
collector current (DC) − 1 A
I
CM
peak collector current − 2 A
I
BM
peak base current − 1 A
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 250 mW
T
amb
≤ 25 °C; note 2 − 350 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C