Datasheet

2005 Feb 24 2
NXP Semiconductors Product data sheet
40 V, 1A
NPN low V
CEsat
(BISS) transistor
PBSS4140T
FEATURES
• Low collector-emitter saturation voltage
• High current capabilities.
• Improved device reliability due to reduced heat
generation.
APPLICATIONS
• General purpose switching and muting
• LCD backlighting
• Supply line switching circuits
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
NPN low V
CEsat
transistor in a SOT23 plastic package.
PNP complement: PBSS5140T.
MARKING
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
QUICK REFERENCE DATA
PINNING
TYPE NUMBER MARKING CODE
(1)
PBSS4140T ZT*
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage 40 V
I
CM
peak collector current 2 A
R
CEsat
equivalent on-resistance <500 mΩ
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
21
3
MAM255
Top view
2
3
1
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PBSS4140T − plastic surface mounted package; 3 leads SOT23