Datasheet

2005 Feb 24 3
NXP Semiconductors Product data sheet
40 V, 1A
NPN low V
CEsat
(BISS) transistor
PBSS4140T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2
.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 40 V
V
CEO
collector-emitter voltage open base − 40 V
V
EBO
emitter-base voltage open collector − 5 V
I
C
collector current (DC) − 1 A
I
CM
peak collector current − 2 A
I
BM
peak base current − 1 A
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 300 mW
T
amb
≤ 25 °C; note 2 − 450 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS TYPICAL UNIT
R
th(j-a)
thermal resistance from junction
to ambient
in free air; note 1 417 K/W
in free air; note 2 278 K/W