Datasheet

2001 Dec 13 2
NXP Semiconductors Product data sheet
40 V low V
CEsat
NPN/PNP transistor
PBSS4140DPN
FEATURES
• 600 mW total power dissipation
• Low collector-emitter saturation voltage
• High current capability
• Improved device reliability due to reduced heat
generation
• Replaces two SOT23 packaged low V
CEsat
transistors
on same PCB
area
• Reduces required PCB area
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and muting
• LCD backlighting
• Supply line switching circuits
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
NPN/PNP low V
CEsat
transistor pair in an SC-74 (SOT457)
plastic package.
MARKING
TYPE NUMBER MARKING CODE
PBSS4140DPN M2
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
handbook, halfpage
MAM445
132
TR1
TR2
6
4
5
Top view
123
654
Fig.1 Simplified outline SC74 (SOT457) and
symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage 40 V
I
C
peak collector current 1 A
I
CM
peak collector current 2 A
TR1 NPN − −
TR2 PNP − −
R
CEsat
equivalent on-resistance <500 mΩ