DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PBSS4140DPN 40 V low VCEsat NPN/PNP transistor Product data sheet 2001 Dec 13
NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor FEATURES PBSS4140DPN QUICK REFERENCE DATA • 600 mW total power dissipation SYMBOL • Low collector-emitter saturation voltage PARAMETER MAX.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4140DPN LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4140DPN CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4140DPN MLD642 1000 MLD635 10 handbook, halfpage handbook, halfpage hFE 800 VBE (1) (V) 600 (2) (1) 1 400 (2) (3) (3) 200 0 10−1 1 102 10 10−1 10−1 103 104 IC (mA) 1 TR1 (NPN); VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR1 (NPN); VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4140DPN MLD637 400 handbook, halfpage fT (MHz) 300 200 100 0 0 200 400 600 1000 800 IC (mA) TR1 (NPN); VCE = 10 V. Fig.6 Transition frequency as a function of collector current; typical values.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4140DPN MLD638 1200 MLD639 −10 handbook, halfpage handbook, halfpage hFE VBE (V) (1) 800 −1 (1) (2) (2) 400 (3) (3) 0 10−1 −1 −102 −10 −103 −10−1 −10−1 −104 IC (mA) −1 TR2 (PNP); VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR2 (PNP); VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.7 Fig.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4140DPN MLD641 300 handbook, halfpage fT (MHz) 200 100 0 0 −200 −400 −600 −800 −1000 IC (mA) TR2 (PNP); VCE = -10 V. Fig.11 Transition frequency as a function of collector current; typical values.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4140DPN PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT457 D E B y A HE 6 X v M A 4 5 Q pin 1 index A A1 c 1 2 3 Lp bp e w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4140DPN DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.