Datasheet

2003 Nov 27 4
Philips Semiconductors Product specification
30 V, 1 A
NPN low V
CEsat
(BISS) transistor
PBSS4130T
CHARACTERISTICS
T
amb
=25°C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
=30V; I
E
=0 −−100 nA
V
CB
=30V; I
E
= 0; T
j
= 150 °C −−50 µA
I
EBO
emitter-base cut-off current V
EB
=4V; I
C
=0 −−100 nA
h
FE
DC current gain V
CE
=2V; I
C
= 100 mA 350 470 −
V
CE
=2V; I
C
= 500 mA 300 450 −
V
CE
=2V; I
C
= 1 A 300 420 −
V
CEsat
collector-emitter saturation voltage I
C
= 100 mA; I
B
=1mA −−90 mV
I
C
= 500 mA; I
B
=50mA −−120 mV
I
C
= 750 mA; I
B
=15mA −−220 mV
I
C
= 1 A; I
B
= 50 mA; note 1 −−270 mV
R
CEsat
equivalent on-resistance I
C
= 500 mA; I
B
= 50 mA; note 1 −−240 mΩ
V
BEsat
base-emitter saturation voltage I
C
= 1 A; I
B
= 100 mA; note 1 −−1.1 V
V
BEon
base-emitter turn-on voltage V
CE
=2V; I
C
= 100 mA −−0.75 V
f
T
transition frequency I
C
= 100 mA; V
CE
=10V;
f = 100 MHz
100 −−MHz
C
c
collector capacitance V
CB
=10V; I
E
=I
e
= 0; f = 1 MHz −−20 pF