Datasheet
NXP Semiconductors
PBSS4130PANP
30 V, 1 A NPN/PNP low VCEsat (BISS) transistor
PBSS4130PANP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 12 December 2012 9 / 21
006aad171
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
10
2
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
4-layer PCB 70 µm, mounting pad for collector 1 cm
2
Fig. 9. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
TR1 (NPN)
V
CB
= 24 V; I
E
= 0 A; T
amb
= 25 °C - - 100 nAI
CBO
collector-base cut-off
current
V
CB
= 24 V; I
E
= 0 A; T
j
= 150 °C - - 50 µA
I
EBO
emitter-base cut-off
current
V
EB
= 5 V; I
C
= 0 A; T
amb
= 25 °C - - 100 nA
V
CE
= 2 V; I
C
= 100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
240 370 -
V
CE
= 2 V; I
C
= 500 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
210 320 -
h
FE
DC current gain
V
CE
= 2 V; I
C
= 1 A; pulsed; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C
180 270 -
I
C
= 500 mA; I
B
= 50 mA; T
amb
= 25 °C - 75 100 mV
I
C
= 1 A; I
B
= 50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- 155 200 mV
V
CEsat
collector-emitter
saturation voltage
I
C
= 1 A; I
B
= 100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- 150 190 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= 1 A; I
B
= 0.1 A; pulsed; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C
- - 190 mΩ