Datasheet

NXP Semiconductors
PBSS4130PANP
30 V, 1 A NPN/PNP low VCEsat (BISS) transistor
PBSS4130PANP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 12 December 2012 13 / 21
006aad178
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
1
10
10
2
10
3
R
CEsat
(Ω)
10
-1
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 16. TR1 (NPN): Collector-emitter saturation
resistance as a function of collector current;
typical values
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
006aad179
1
10
-1
10
2
10
10
3
R
CEsat
(Ω)
10
-2
(1)
(2)
(3)
T
amb
= 25 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig. 17. TR1 (NPN): Collector-emitter saturation
resistance as a function of collector current;
typical values
006aad180
200
400
600
h
FE
0
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
(1)
(2)
(3)
V
CE
= −2 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 18. TR2 (PNP): DC current gain as a function of
collector current; typical values
V
CE
(V)
0 -5-4-2 -3-1
006aad181
-0.8
-1.2
-0.4
-1.6
-2.0
I
C
(A)
0
I
B
= -20 mA
-18 -16 -14
-12
-10
-8
-6
-4
-2
T
amb
= 25 °C
Fig. 19. TR2 (PNP): Collector current as a function of
collector-emitter voltage; typical values