Datasheet

2003 Sep 29 4
NXP Semiconductors Product data sheet
20 V, 1 A
NPN low V
CEsat
(BISS) transistor
PBSS4120T
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= 30 V; I
E
= 0 − − 100 nA
V
CB
= 30 V; I
E
= 0; T
j
= 150 °C − − 50 μA
I
EBO
emitter-base cut-off current V
EB
= 4 V; I
C
= 0 − − 100 nA
h
FE
DC current gain V
CE
= 2 V; I
C
= 100 mA 350 470 −
V
CE
= 2 V; I
C
= 500 mA 300 450 −
V
CE
= 2 V; I
C
= 1 A 280 420 −
V
CEsat
collector-emitter saturation voltage I
C
= 100 mA; I
B
= 1 mA − − 80 mV
I
C
= 500 mA; I
B
= 50 mA − − 110 mV
I
C
= 750 mA; I
B
= 15 mA − − 200 mV
I
C
= 1 A; I
B
= 50 mA; note 1 − − 250 mV
R
CEsat
equivalent on-resistance I
C
= 500 mA; I
B
= 50 mA; note 1 − − 220 mΩ
V
BEsat
base-emitter saturation voltage I
C
= 1 A; I
B
= 100 mA; note 1 − − 1.1 V
V
BEon
base-emitter turn-on voltage V
CE
= 2 V; I
C
= 100 mA − − 0.75 V
f
T
transition frequency I
C
= 100 mA; V
CE
= 10 V;
f
= 100 MHz
100 − − MHz
C
c
collector capacitance V
CB
= 10 V; I
E
= I
e
= 0;
f
= 1 MHz
− − 20 pF