Datasheet
NXP Semiconductors
PBSS4112PANP
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
PBSS4112PANP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 29 November 2012 13 / 21
aaa-005719
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
1
10
10
2
10
3
R
CEsat
(Ω)
10
-1
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 16. TR1 (NPN): Collector-emitter saturation
resistance as a function of collector current;
typical values
aaa-005720
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
1
10
10
2
10
3
R
CEsat
(Ω)
10
-1
(1)
(2)
(3)
T
amb
= 25 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig. 17. TR1 (NPN): Collector-emitter saturation
resistance as a function of collector current;
typical values
aaa-005721
200
400
600
h
FE
0
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
(1)
(2)
(3)
V
CE
= −2 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 18. TR2 (PNP): DC current gain as a function of
collector current; typical values
V
CE
(V)
0 -5-4-2 -3-1
aaa-005722
-0.5
-1.0
-1.5
I
C
(A)
0.0
I
B
= -90 mA
-81
-72
-63
-54
-45
-36
-27
-18
-9
T
amb
= 25 °C
Fig. 19. TR2 (PNP): Collector current as a function of
collector-emitter voltage; typical values