Datasheet

NXP Semiconductors
PBSS4112PANP
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
PBSS4112PANP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 29 November 2012 11 / 21
Symbol Parameter Conditions Min Typ Max Unit
V
BEon
base-emitter turn-on
voltage
V
CE
= -2 V; I
C
= -0.5 A; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- - -0.9 V
t
d
delay time - 15 - ns
t
r
rise time - 245 - ns
t
on
turn-on time - 260 - ns
t
s
storage time - 290 - ns
t
f
fall time - 270 - ns
t
off
turn-off time
V
CC
= -10 V; I
C
= -500 mA;
I
Bon
= -25 mA; I
Boff
= 25 mA;
T
amb
= 25 °C
- 560 - ns
f
T
transition frequency V
CE
= -10 V; I
C
= -50 mA; f = 100 MHz;
T
amb
= 25 °C
50 100 - MHz
C
c
collector capacitance V
CB
= -10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
- 9.5 13 pF
aaa-005713
200
400
600
h
FE
0
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
(1)
(2)
(3)
V
CE
= 2 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 10. TR1 (NPN): DC current gain as a function of
collector current; typical values
V
CE
(V)
0 542 31
aaa-005714
0.5
1.0
1.5
I
C
(A)
0.0
I
B
= 50 mA
45
40
35
30
25
20
15
10
5
T
amb
= 25 °C
Fig. 11. TR1 (NPN): Collector current as a function of
collector-emitter voltage; typical values