Datasheet

PBSS4112PANP
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
29 November 2012 Product data sheet
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1. Product profile
1.1 General description
NPN/PNP low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a leadless
medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/NPN complement: PBSS4112PAN. PNP/PNP complement: PBSS5112PAP.
1.2 Features and benefits
Very low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High collector current gain h
FE
at high I
C
Reduced Printed-Circuit Board (PCB) requirements
High efficiency due to less heat generation
AEC-Q101 qualified
1.3 Applications
Load switch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
V
CEO
collector-emitter
voltage
open base - - 120 V
I
C
collector current - - 1 A
I
CM
peak collector current single pulse; t
p
≤ 1 ms - - 1.5 A
TR1 (NPN)
R
CEsat
collector-emitter
saturation resistance
I
C
= 500 mA; I
B
= 50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- - 240

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