Datasheet

PBSS4041SPN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 20 October 2010 4 of 20
NXP Semiconductors
PBSS4041SPN
60 V NPN/PNP low V
CEsat
(BISS) transistor
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm
2
(3) FR4 PCB, standard footprint
Fig 1. Per device: Power derating curves
T
amb
(°C)
−75 17512525 75−25
006aac346
1.0
2.0
3.0
P
tot
(W)
0.0
(2)
(1)
(3)
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
--170K/W
[2]
--125K/W
[3]
--75K/W
R
th(j-sp)
thermal resistance from
junction to solder point
--40K/W
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
--145K/W
[2]
--90K/W
[3]
--55K/W