Datasheet

PBSS4041SP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 18 October 2010 6 of 15
NXP Semiconductors
PBSS4041SP
60 V, 5.9 A PNP/PNP low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 8. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
I
CBO
collector-base
cut-off current
V
CB
= −60 V; I
E
=0A - - −100 nA
V
CB
= −60 V; I
E
=0A;
T
j
=150°C
--−50 μA
I
CES
collector-emitter
cut-off current
V
CE
= −48 V; V
BE
=0V - - −100 nA
I
EBO
emitter-base
cut-off current
V
EB
= −5V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −2V
[1]
I
C
= −500 mA 200 300 -
I
C
= −1 A 180 270 -
I
C
= −2 A 150 250 -
I
C
= −4 A 120 180 -
I
C
= −6A 80 125 -
V
CEsat
collector-emitter
saturation voltage
[1]
I
C
= −1A; I
B
= −50 mA - −65 −90 mV
I
C
= −1A; I
B
= −10 mA - −130 −190 mV
I
C
= −2A; I
B
= −40 mA - −155 −230 mV
I
C
= −4A; I
B
= −200 mA - −220 −330 mV
I
C
= −4A; I
B
= −400 mA - −190 −275 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −4A; I
B
= −400 mA
[1]
-4770mΩ
V
BEsat
base-emitter
saturation voltage
[1]
I
C
= −1A; I
B
= −100 mA - −0.84 −1V
I
C
= −4A; I
B
= −400 mA - −1 −1.2 V
V
BEon
base-emitter
turn-on voltage
V
CE
= −2V; I
C
= −2A
[1]
- −0.78 −0.85 V
t
d
delay time V
CC
= −12.5 V; I
C
= −1A;
I
Bon
= −0.05 A; I
Boff
=0.05A
-45-ns
t
r
rise time - 60 - ns
t
on
turn-on time - 105 - ns
t
s
storage time - 440 - ns
t
f
fall time - 75 - ns
t
off
turn-off time - 515 - ns
f
T
transition frequency V
CE
= −10 V; I
C
= −100 mA;
f=100MHz
-110-MHz
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f=1MHz
-85-pF