Datasheet

PBSS4041PT_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 9 March 2010 6 of 15
NXP Semiconductors
PBSS4041PT
60 V, 2.7 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −60 V; I
E
=0A - - −100 nA
V
CB
= −60 V; I
E
=0A;
T
j
=150°C
--−55 μA
I
CES
collector-emitter
cut-off current
V
CE
= −48 V; V
BE
=0V - - −100 nA
I
EBO
emitter-base cut-off
current
V
EB
= −5V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −2V; I
C
= −500 mA 200 300 -
V
CE
= −2V; I
C
= −1A
[1]
150 270 -
V
CE
= −2V; I
C
= −2A
[1]
120 180 -
V
CE
= −2V; I
C
= −4A
[1]
35 55 -
V
CEsat
collector-emitter
saturation voltage
I
C
= −500 mA;
I
B
= −50 mA
- −49 −75 mV
I
C
= −1A; I
B
= −50 mA
[1]
- −100 −150 mV
I
C
= −1A; I
B
= −10 mA
[1]
- −260 −390 mV
I
C
= −2A; I
B
= −40 mA
[1]
- −420 −600 mV
I
C
= −3A; I
B
= −300 mA
[1]
- −240 −360 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −3A; I
B
= −300 mA
[1]
-80120mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= −1A; I
B
= −100 mA
[1]
- −0.9 −1.0 V
I
C
= −3A; I
B
= −300 mA
[1]
- −1.04 −1.15 V
V
BEon
base-emitter turn-on
voltage
V
CE
= −2V; I
C
= −2A - −0.84 −0.9 V
t
d
delay time V
CC
= −12.5 V; I
C
= −1A;
I
Bon
= −0.05 A;
I
Boff
=0.05A
-18-ns
t
r
rise time - 70 - ns
t
on
turn-on time - 88 - ns
t
s
storage time - 350 - ns
t
f
fall time - 80 - ns
t
off
turn-off time - 430 - ns
f
T
transition frequency V
CE
= −10 V;
I
C
= −100 mA;
f=100MHz
- 150 - MHz
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f=1MHz
-38-pF