Datasheet

PBSS4041PT_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 9 March 2010 2 of 15
NXP Semiconductors
PBSS4041PT
60 V, 2.7 A PNP low V
CEsat
(BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1base
2emitter
3 collector
12
3
sym01
3
3
2
1
Table 3. Ordering information
Type number Package
Name Description Version
PBSS4041PT - plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
Type number Marking code
[1]
PBSS4041PT *BL
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - −60 V
V
CEO
collector-emitter voltage open base - −60 V
V
EBO
emitter-base voltage open collector - −5V
I
C
collector current - −2.7 A
I
CM
peak collector current single pulse;
t
p
≤ 1ms
- −8A
I
B
base current - −1A