Datasheet

PBSS4032SPN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 14 October 2010 3 of 20
NXP Semiconductors
PBSS4032SPN
30 V NPN/PNP low V
CEsat
(BISS) transistor
5. Limiting values
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
TR1 (NPN)
I
C
collector current - 5.7 A
TR2 (PNP)
I
C
collector current - −4.8 A
Per transistor; for the PNP transistor with negative polarity
V
CBO
collector-base voltage open emitter - 30 V
V
CEO
collector-emitter voltage open base - 30 V
V
EBO
emitter-base voltage open collector - 5 V
I
CM
peak collector current single pulse; t
p
≤ 1ms - 10 A
I
B
base current - 1 A
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
-0.73W
[2]
-1W
[3]
-1.7W
Per device
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
-0.86W
[2]
-1.4W
[3]
-2.3W
T
j
junction temperature - 150 °C
T
amb
ambient temperature −55 +150 °C
T
stg
storage temperature −65 +150 °C