Datasheet

PBSS4032SPN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 14 October 2010 2 of 20
NXP Semiconductors
PBSS4032SPN
30 V NPN/PNP low V
CEsat
(BISS) transistor
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
2. Pinning information
3. Ordering information
4. Marking
TR2; PNP low V
CEsat
transistor
V
CEO
collector-emitter voltage open base - - −30 V
I
C
collector current - - −4.8 A
I
CM
peak collector current single pulse; t
p
≤ 1ms - - −10 A
R
CEsat
collector-emitter
saturation resistance
I
C
= −4A; I
B
= −0.4 A
[1]
- 6598mΩ
Table 2. Quick reference data …continued
Symbol Parameter Conditions Min Typ Max Unit
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
1emitter TR1
2 base TR1
3emitter TR2
4 base TR2
5 collector TR2
6 collector TR2
7 collector TR1
8 collector TR1
4
5
1
8
006aaa98
5
8765
1234
TR1 TR2
Table 4. Ordering information
Type number Package
Name Description Version
PBSS4032SPN SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
Table 5. Marking codes
Type number Marking code
PBSS4032SPN 4032SPN