Datasheet

PBSS4032SP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 13 October 2010 6 of 15
NXP Semiconductors
PBSS4032SP
30 V, 4.8 A PNP/PNP low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 8. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
I
CBO
collector-base
cut-off current
V
CB
= −30 V; I
E
=0A - - −100 nA
V
CB
= −30 V; I
E
=0A;
T
j
=150°C
--−50 μA
I
CES
collector-emitter
cut-off current
V
CE
= −24 V; V
BE
=0V - - −100 nA
I
EBO
emitter-base
cut-off current
V
EB
= −5V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −2V
[1]
I
C
= −500 mA 200 380 -
I
C
= −1 A 200 330 -
I
C
= −2 A 150 250 -
I
C
= −4A 60 100 -
I
C
= −5A 40 60 -
V
CEsat
collector-emitter
saturation voltage
[1]
I
C
= −1A; I
B
= −50 mA - −115 −165 mV
I
C
= −1A; I
B
= −10 mA - −170 −240 mV
I
C
= −2A; I
B
= −40 mA - −210 −300 mV
I
C
= −4A; I
B
= −400 mA - −260 −390 mV
I
C
= −4A; I
B
= −200 mA - −300 −450 mV
I
C
= −5A; I
B
= −250 mA - −340 −510 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −4A; I
B
= −400 mA
[1]
-6598mΩ
V
BEsat
base-emitter
saturation voltage
[1]
I
C
= −1A; I
B
= −100 mA - −0.8 −0.9 V
I
C
= −4A; I
B
= −400 mA - −0.99 −1.1 V
V
BEon
base-emitter
turn-on voltage
V
CE
= −2V; I
C
= −2A
[1]
- −0.81 −0.9 V
t
d
delay time V
CC
= −12.5 V; I
C
= −1A;
I
Bon
= −0.05 A; I
Boff
=0.05A
-30-ns
t
r
rise time - 60 - ns
t
on
turn-on time - 90 - ns
t
s
storage time - 140 - ns
t
f
fall time - 80 - ns
t
off
turn-off time - 220 - ns
f
T
transition frequency V
CE
= −10 V; I
C
= −100 mA;
f=100MHz
-115-MHz
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f=1MHz
-85-pF