Datasheet

PBSS4032SP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 13 October 2010 2 of 15
NXP Semiconductors
PBSS4032SP
30 V, 4.8 A PNP/PNP low V
CEsat
(BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
1emitter TR1
2 base TR1
3emitter TR2
4 base TR2
5 collector TR2
6 collector TR2
7 collector TR1
8 collector TR1
4
5
1
8
006aaa97
6
8765
1234
TR1 TR2
Table 4. Ordering information
Type number Package
Name Description Version
PBSS4032SP SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
Table 5. Marking codes
Type number Marking code
PBSS4032SP 4032SP
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
CBO
collector-base voltage open emitter - −30 V
V
CEO
collector-emitter voltage open base - −30 V
V
EBO
emitter-base voltage open collector - −5V
I
C
collector current - −4.8 A
I
CM
peak collector current single pulse;
t
p
≤ 1ms
- −10 A
I
B
base current - −1A
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
-0.73W
[2]
-1W
[3]
-1.7W