Datasheet

PBSS4032SN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 13 October 2010 8 of 15
NXP Semiconductors
PBSS4032SN
30 V, 5.7 A NPN/NPN low V
CEsat
(BISS) transistor
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
006aac286
I
C
(mA)
10
−1
10
4
10
3
110
2
10
10
−1
1
V
CEsat
(V)
10
−2
(1)
(3)
(2)
006aac287
I
C
(mA)
10
−1
10
4
10
3
110
2
10
10
−1
1
V
CEsat
(V)
10
−2
(1)
(3)
(2)
I
C
(mA)
10
−1
10
4
10
3
110
2
10
006aac288
1
10
−1
10
2
10
10
3
R
CEsat
(Ω)
10
−2
(1)
(2)
(3)
I
C
(mA)
10
−1
10
4
10
3
110
2
10
006aac289
1
10
−1
10
2
10
10
3
R
CEsat
(Ω)
10
−2
(1)
(2)
(3)