Datasheet

PBSS4032SN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 13 October 2010 6 of 15
NXP Semiconductors
PBSS4032SN
30 V, 5.7 A NPN/NPN low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 8. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
I
CBO
collector-base
cut-off current
V
CB
=30V; I
E
= 0 A - - 100 nA
V
CB
=30V; I
E
=0A;
T
j
=150°C
--50μA
I
CES
collector-emitter
cut-off current
V
CE
=24V; V
BE
= 0 V - - 100 nA
I
EBO
emitter-base
cut-off current
V
EB
=5V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=2V
[1]
I
C
= 500 mA 300 500 -
I
C
= 1 A 300 500 -
I
C
= 2 A 250 450 -
I
C
= 4 A 200 400 -
I
C
= 6 A 150 300 -
V
CEsat
collector-emitter
saturation voltage
[1]
I
C
=1A; I
B
= 50 mA - 90 125 mV
I
C
=1A; I
B
= 10 mA - 130 180 mV
I
C
=2A; I
B
= 40 mA - 150 210 mV
I
C
=4A; I
B
= 400 mA - 185 250 mV
I
C
=4A; I
B
= 40 mA - 250 375 mV
I
C
=6A; I
B
= 300 mA - 300 450 mV
R
CEsat
collector-emitter
saturation resistance
I
C
=4A; I
B
=400mA
[1]
- 45 62.5 mΩ
V
BEsat
base-emitter
saturation voltage
[1]
I
C
=1A; I
B
=100mA - 0.76 0.9 V
I
C
=4A; I
B
=400mA - 0.91 1.05 V
V
BEon
base-emitter
turn-on voltage
V
CE
=2V; I
C
=2A
[1]
-0.770.85V
t
d
delay time V
CC
=12.5V; I
C
=1A;
I
Bon
=0.05A; I
Boff
= −0.05 A
-35-ns
t
r
rise time - 30 - ns
t
on
turn-on time - 65 - ns
t
s
storage time - 150 - ns
t
f
fall time - 65 - ns
t
off
turn-off time - 215 - ns
f
T
transition frequency V
CE
=10V; I
C
=100mA;
f=100MHz
-140-MHz
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
-65-pF