Datasheet

PBSS4032PZ_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 31 March 2010 2 of 15
NXP Semiconductors
PBSS4032PZ
30 V, 4.4 A PNP low V
CEsat
(BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1base
2 collector
3emitter
4 collector
132
4
sym028
2, 4
3
1
Table 3. Ordering information
Type number Package
Name Description Version
PBSS4032PZ SC-73 plastic surface-mounted package with increased
heat sink; 4 leads
SOT223
Table 4. Marking codes
Type number Marking code
PBSS4032PZ PB4032PZ
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - −30 V
V
CEO
collector-emitter voltage open base - −30 V
V
EBO
emitter-base voltage open collector - −5V
I
C
collector current - −4.4 A
I
CM
peak collector current single pulse;
t
p
≤ 1ms
- −10 A
I
B
base current - −1A