Datasheet

PBSS4032PT_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 18 December 2009 6 of 14
NXP Semiconductors
PBSS4032PT
30 V, 2.4 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −30 V; I
E
=0A - - −100 nA
V
CB
= −30 V; I
E
=0A;
T
j
=150°C
--−55 μA
I
CES
collector-emitter
cut-off current
V
CE
= −24 V; V
BE
=0V - - −100 nA
I
EBO
emitter-base cut-off
current
V
EB
= −5V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −2V;
I
C
= −500 mA
200 320 -
V
CE
= −2V; I
C
= −1A
[1]
150 230 -
V
CE
= −2V; I
C
= −2A
[1]
- 100 -
V
CE
= −2V; I
C
= −3A
[1]
-50-
V
CEsat
collector-emitter
saturation voltage
I
C
= −500 mA;
I
B
= −50 mA
- −95 −150 mV
I
C
= −1A; I
B
= −50 mA
[1]
- −155 −230 mV
I
C
= −1A; I
B
= −10 mA
[1]
- −250 −375 mV
I
C
= −2A; I
B
= −200 mA
[1]
- −220 −330 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −2A; I
B
= −200 mA
[1]
- 110 165 mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= −1A; I
B
= −100 mA
[1]
- −0.86 −0.95 V
I
C
= −2A; I
B
= −200 mA
[1]
- −0.95 −1.05 V
V
BEon
base-emitter turn-on
voltage
V
CE
= −2V; I
C
= −0.5 A - −0.75 −0.9 V
t
d
delay time V
CC
= −12.5 V;
I
C
= −1A; I
Bon
= −0.05 A;
I
Boff
=0.05A
-15-ns
t
r
rise time - 55 - ns
t
on
turn-on time - 70 - ns
t
s
storage time - 125 - ns
t
f
fall time - 60 - ns
t
off
turn-off time - 185 - ns
f
T
transition frequency V
CE
= −10 V;
I
C
= −100 mA;
f=100MHz
- 160 - MHz
C
c
collector capacitance V
CB
= −10 V;
I
E
=i
e
=0A; f=1MHz
-40-pF