Datasheet

PBSS4032PD_1 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 27 January 2010 6 of 14
NXP Semiconductors
PBSS4032PD
30 V, 2.7 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −30 V; I
E
=0A - - −100 nA
V
CB
= −30 V; I
E
=0A;
T
j
=150°C
--−55 μA
I
CES
collector-emitter
cut-off current
V
CE
= −24 V; V
BE
=0V - - −100 nA
I
EBO
emitter-base cut-off
current
V
EB
= −5V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −2V;
I
C
= −500 mA
[1]
200 350 -
V
CE
= −2V; I
C
= −1A
[1]
200 300 -
V
CE
= −2V; I
C
= −2A
[1]
100 160 -
V
CE
= −2V; I
C
= −4A
[1]
25 40 -
V
CEsat
collector-emitter
saturation voltage
I
C
= −500 mA;
I
B
= −50 mA
- −87 −130 mV
I
C
= −1A; I
B
= −50 mA
[1]
- −140 −210 mV
I
C
= −1A; I
B
= −10 mA
[1]
- −205 −300 mV
I
C
= −2A; I
B
= −40 mA
[1]
- −280 −420 mV
I
C
= −2A; I
B
= −200 mA
[1]
- −170 −255 mV
I
C
= −3A; I
B
= −300 mA
[1]
- −265 −395 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −3A; I
B
= −300 mA
[1]
-88130mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= −1A; I
B
= −100 mA
[1]
- −0.83 −0.9 V
I
C
= −3A; I
B
= −300 mA
[1]
- −1.11 −1.2 V
V
BEon
base-emitter turn-on
voltage
V
CE
= −2V; I
C
= −2A - −0.85 −0.95 V
t
d
delay time V
CC
= −12.5 V;
I
C
= −1A; I
Bon
= −0.05 A;
I
Boff
=0.05A
-20-ns
t
r
rise time - 55 - ns
t
on
turn-on time - 75 - ns
t
s
storage time - 130 - ns
t
f
fall time - 80 - ns
t
off
turn-off time - 210 - ns
f
T
transition frequency V
CE
= −10 V;
I
C
= −100 mA;
f=100MHz
- 104 - MHz
C
c
collector capacitance V
CB
= −10 V;
I
E
=i
e
=0A; f=1MHz
-59-pF