Datasheet

PBSS4032PD_1 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 27 January 2010 2 of 14
NXP Semiconductors
PBSS4032PD
30 V, 2.7 A PNP low V
CEsat
(BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 collector
2 collector
3base
4emitter
5 collector
6 collector
132
4
56
4
3
1, 2, 5, 6
sym030
Table 3. Ordering information
Type number Package
Name Description Version
PBSS4032PD SC-74 plastic surface-mounted package; 6 leads SOT457
Table 4. Marking codes
Type number Marking code
PBSS4032PD ZG
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - −30 V
V
CEO
collector-emitter voltage open base - −30 V
V
EBO
emitter-base voltage open collector - −5V
I
C
collector current - −2.7 A
I
CM
peak collector current single pulse;
t
p
≤ 1ms
- −5A
I
B
base current - −0.5 A