Datasheet

PBSS4032NT_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 18 December 2009 6 of 14
NXP Semiconductors
PBSS4032NT
30 V, 2.6 A NPN low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
=30V; I
E
= 0 A - - 100 nA
V
CB
=30V; I
E
=0A;
T
j
=150°C
--50μA
I
CES
collector-emitter
cut-off current
V
CE
=24V; V
BE
= 0 V - - 100 nA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=2V; I
C
= 500 mA 300 500 -
V
CE
=2V; I
C
=1A
[1]
300 500 -
V
CE
=2V; I
C
=2A
[1]
200 370 -
V
CE
=2V; I
C
=4A
[1]
100 150 -
V
CEsat
collector-emitter
saturation voltage
I
C
= 500 mA; I
B
= 50 mA - 80 120 mV
I
C
=1A; I
B
=50mA
[1]
- 125 175 mV
I
C
=1A; I
B
=10mA
[1]
- 175 245 mV
I
C
=2.5A; I
B
=250mA
[1]
- 200 280 mV
I
C
=3A; I
B
=300mA
[1]
- 230 320 mV
R
CEsat
collector-emitter
saturation resistance
I
C
=2.5A; I
B
=250mA
[1]
-76105mΩ
V
BEsat
base-emitter
saturation voltage
I
C
=1A; I
B
=100mA
[1]
- 0.79 0.9 V
I
C
=2.5A; I
B
=250mA
[1]
- 0.88 0.95 V
V
BEon
base-emitter turn-on
voltage
V
CE
=2V; I
C
= 2 A - 0.79 0.85 V
t
d
delay time V
CC
=12.5V; I
C
=1A;
I
Bon
=0.05A;
I
Boff
= −0.05 A
-15-ns
t
r
rise time - 20 - ns
t
on
turn-on time - 35 - ns
t
s
storage time - 135 - ns
t
f
fall time - 60 - ns
t
off
turn-off time - 195 - ns
f
T
transition frequency V
CE
=10V;
I
C
= 100 mA;
f=100MHz
- 180 - MHz
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
-28-pF