Datasheet

PBSS4032NT_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 18 December 2009 2 of 14
NXP Semiconductors
PBSS4032NT
30 V, 2.6 A NPN low V
CEsat
(BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1base
2emitter
3 collector
12
3
sym02
1
3
2
1
Table 3. Ordering information
Type number Package
Name Description Version
PBSS4032NT - plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
Type number Marking code
[1]
PBSS4032NT *BM
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 30 V
V
CEO
collector-emitter voltage open base - 30 V
V
EBO
emitter-base voltage open collector - 5 V
I
C
collector current - 2.6 A
I
CM
peak collector current single pulse;
t
p
≤ 1ms
-5A
I
B
base current - 0.5 A