Datasheet

PBSS4021SPN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 13 October 2010 7 of 20
NXP Semiconductors
PBSS4021SPN
20 V NPN/PNP low V
CEsat
(BISS) transistor
7. Characteristics
Table 8. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
TR1; NPN low V
CEsat
transistor
I
CBO
collector-base
cut-off current
V
CB
=20V; I
E
= 0 A - - 100 nA
V
CB
=20V; I
E
=0A;
T
j
=150°C
--50μA
I
CES
collector-emitter
cut-off current
V
CE
=16V; V
BE
= 0 V - - 100 nA
I
EBO
emitter-base
cut-off current
V
EB
=5V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=2V
[1]
I
C
= 500 mA 300 550 -
I
C
= 1 A 300 550 -
I
C
= 2 A 300 500 -
I
C
= 4 A 250 450 -
I
C
= 8 A 100 200 -
V
CEsat
collector-emitter
saturation voltage
[1]
I
C
=1A; I
B
=50mA - 30 45 mV
I
C
=1A; I
B
=10mA - 40 60 mV
I
C
=2A; I
B
=40mA - 60 90 mV
I
C
=4A; I
B
= 200 mA - 100 150 mV
I
C
=4A; I
B
= 40 mA - 120 180 mV
I
C
=7.5A; I
B
= 375 mA - 185 275 mV
R
CEsat
collector-emitter
saturation resistance
I
C
=5A; I
B
=500mA
[1]
-2535mΩ
V
BEsat
base-emitter
saturation voltage
[1]
I
C
=1A; I
B
=100mA - 0.87 1 V
I
C
=4A; I
B
=400mA - 1.04 1.2 V
V
BEon
base-emitter
turn-on voltage
V
CE
=2V; I
C
=2A
[1]
-0.760.85V
t
d
delay time V
CC
=12.5V; I
C
=1A;
I
Bon
=0.05 A; I
Boff
= −0.05 A
-40-ns
t
r
rise time - 40 - ns
t
on
turn-on time - 80 - ns
t
s
storage time - 650 - ns
t
f
fall time - 75 - ns
t
off
turn-off time - 725 - ns
f
T
transition frequency V
CE
=10V; I
C
=100mA;
f=100MHz
-115-MHz
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
-85-pF