Datasheet

PBSS4021SP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 11 October 2010 6 of 15
NXP Semiconductors
PBSS4021SP
20 V, 6.3 A PNP/PNP low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 8. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
I
CBO
collector-base
cut-off current
V
CB
= −20 V; I
E
=0A - - −100 nA
V
CB
= −20 V; I
E
=0A;
T
j
=150°C
--−50 μA
I
CES
collector-emitter
cut-off current
V
CE
= −16 V; V
BE
=0V - - −100 nA
I
EBO
emitter-base
cut-off current
V
EB
= −5V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −2V
[1]
I
C
= −500 mA 250 400 -
I
C
= −1 A 250 400 -
I
C
= −2 A 200 350 -
I
C
= −4 A 150 300 -
I
C
= −7A 80 200 -
V
CEsat
collector-emitter
saturation voltage
[1]
I
C
= −1A; I
B
= −50 mA - −45 −68 mV
I
C
= −1A; I
B
= −10 mA - −70 −115 mV
I
C
= −2A; I
B
= −40 mA - −100 −150 mV
I
C
= −4A; I
B
= −200 mA - −150 −225 mV
I
C
= −4A; I
B
= −40 mA - −250 −375 mV
I
C
= −6.5 A; I
B
= −325 mA - −235 −350 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −5A; I
B
= −500 mA
[1]
-3654mΩ
V
BEsat
base-emitter
saturation voltage
[1]
I
C
= −1A; I
B
= −100 mA - −0.85 −1V
I
C
= −4A; I
B
= −400 mA - −1 −1.2 V
V
BEon
base-emitter
turn-on voltage
V
CE
= −2V; I
C
= −2A
[1]
- −0.76 −0.85 V
t
d
delay time V
CC
= −12.5 V; I
C
= −1A;
I
Bon
= −0.05 A; I
Boff
=0.05A
-40-ns
t
r
rise time - 55 - ns
t
on
turn-on time - 95 - ns
t
s
storage time - 340 - ns
t
f
fall time - 85 - ns
t
off
turn-off time - 425 - ns
f
T
transition frequency V
CE
= −10 V; I
C
= −100 mA;
f=100MHz
-105-MHz
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f=1MHz
-95-pF