Datasheet

PBSS4021PZ_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 31 March 2010 6 of 15
NXP Semiconductors
PBSS4021PZ
20 V, 6.6 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −20 V; I
E
=0A - - −100 nA
V
CB
= −20 V; I
E
=0A;
T
j
=150°C
--−55 μA
I
CES
collector-emitter
cut-off current
V
CE
= −16 V; V
BE
=0V - - −100 nA
I
EBO
emitter-base cut-off
current
V
EB
= −5V; I
C
=0A - - −100 nA
h
FE
DC current gain
[1]
V
CE
= −2V;
I
C
= −500 mA
250 400 -
V
CE
= −2V; I
C
= −1 A 250 400 -
V
CE
= −2V; I
C
= −2 A 200 350 -
V
CE
= −2V; I
C
= −4 A 150 250 -
V
CE
= −2V; I
C
= −7 A 100 180 -
V
CEsat
collector-emitter
saturation voltage
[1]
I
C
= −1A; I
B
= −50 mA - −31 −50 mV
I
C
= −1A; I
B
= −10 mA - −53 −80 mV
I
C
= −2A; I
B
= −40 mA - −66 −100 mV
I
C
= −4A; I
B
= −200 mA - −95 −140 mV
I
C
= −4A; I
B
= −40 mA - −150 −225 mV
I
C
= −7A; I
B
= −350 mA - −160 −240 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −6A; I
B
= −600 mA
[1]
-2233mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= −1A; I
B
= −50 mA
[1]
- −0.79 −0.9 V
I
C
= −4A; I
B
= −400 mA
[1]
- −0.94 −1.05 V
V
BEon
base-emitter turn-on
voltage
V
CE
= −2V; I
C
= −2A
[1]
- −0.73 −0.85 V
t
d
delay time V
CC
= −12.5 V;
I
C
= −1A; I
Bon
= −0.05 A;
I
Boff
=0.05A
-55-ns
t
r
rise time - 60 - ns
t
on
turn-on time - 115 - ns
t
s
storage time - 400 - ns
t
f
fall time - 110 - ns
t
off
turn-off time - 510 - ns
f
T
transition frequency V
CE
= −10 V;
I
C
= −100 mA;
f=100MHz
-85-MHz
C
c
collector capacitance V
CB
= −10 V;
I
E
=i
e
=0A; f=1MHz
- 125 - pF