Datasheet

PBSS4021PX_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 1 April 2010 6 of 15
NXP Semiconductors
PBSS4021PX
20 V, 6.2 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −20 V; I
E
=0A - - −100 nA
V
CB
= −20 V; I
E
=0A;
T
j
=150°C
--−50 μA
I
CES
collector-emitter
cut-off current
V
CE
= −16 V; V
BE
=0V - - −100 nA
I
EBO
emitter-base cut-off
current
V
EB
= −5V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −2V
[1]
I
C
= −500 mA 250 400 -
I
C
= −1 A 250 400 -
I
C
= −2 A 200 300 -
I
C
= −4 A 150 200 -
I
C
= −7 A 80 140 -
V
CEsat
collector-emitter
saturation voltage
[1]
I
C
= −1A; I
B
= −50 mA - −34 −50 mV
I
C
= −1A; I
B
= −10 mA - −60 −90 mV
I
C
= −2A; I
B
= −40 mA - −72 −110 mV
I
C
= −4A; I
B
= −200 mA - −105 −160 mV
I
C
= −4A; I
B
= −40 mA - −180 −270 mV
I
C
= −6.9 A;
I
B
= −345 mA
- −175 −265 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −4A; I
B
= −400 mA
[1]
-2338mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= −1A; I
B
= −100 mA
[1]
- −0.84 −0.9 V
I
C
= −4A; I
B
= −400 mA
[1]
- −0.96 −1.05 V
V
BEon
base-emitter turn-on
voltage
V
CE
= −2V; I
C
= −2A
[1]
- −0.75 −0.85 V
t
d
delay time V
CC
= −12.5 V;
I
C
= −1A; I
Bon
= −0.05 A;
I
Boff
=0.05A
-40-ns
t
r
rise time - 55 - ns
t
on
turn-on time - 95 - ns
t
s
storage time - 340 - ns
t
f
fall time - 85 - ns
t
off
turn-off time - 425 - ns
f
T
transition frequency V
CE
= −10 V;
I
C
= −100 mA;
f=100MHz
- 105 - MHz
C
c
collector capacitance V
CB
= −10 V;
I
E
=i
e
=0A; f=1MHz
-95-pF