Datasheet

2003 Aug 12 6
Philips Semiconductors Product specification
40 V, 0.5 A
PNP low V
CEsat
(BISS) transistor
PBSS3540M
handbook, halfpage
0
(1)
I
C
(mA)
V
CE
(V)
−1200
−800
−400
0
−1 −5
−2 −3 −4
MLE200
(10)
(3)
(5)
(7)
(2)
(4)
(6)
(8)
(9)
Fig.6 Collector current as a function of
collector-emitter voltage; typical values.
(1) I
B
= −40 mA.
(2) I
B
= −36 mA.
(3) I
B
= −32 mA.
(4) I
B
= −28 mA.
(5) I
B
= −24 mA.
(6) I
B
= −20 mA.
(7) I
B
= −16 mA.
(8) I
B
= −12 mA.
(9) I
B
= −8 mA.
(10) I
B
= −4 mA.
T
amb
=25°C.
handbook, halfpage
10
3
10
2
10
1
10
−1
MLE201
−10
−1
−1 −10
I
C
(mA)
R
CEsat
(Ω)
−10
2
−10
3
(1)
(3)
(2)
Fig.7 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
I
C
/I
B
= 20.
(1) T
amb
= 150 °C.
(2) T
amb
=25°C.
(3) T
amb
= −55 °C.