Datasheet

2003 Aug 12 4
Philips Semiconductors Product specification
40 V, 0.5 A
PNP low V
CEsat
(BISS) transistor
PBSS3540M
CHARACTERISTICS
T
amb
=25°C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= −30 V; I
E
=0 −−−100 nA
V
CB
= −30 V; I
E
= 0; T
j
= 150 °C −−−50 µA
I
EBO
emitter-base cut-off current V
EB
= −5 V; I
C
=0 −−−100 nA
h
FE
DC current gain V
CE
= −2 V; I
C
= −10 mA 200 −−
V
CE
= −2 V; I
C
= −100 mA; note 1 150 −−
V
CE
= −2 V; I
C
= −500 mA; note 1 40 −−
V
CEsat
collector-emitter saturation voltage I
C
= −10 mA; I
B
= −0.5 mA −−−50 mV
I
C
= −100 mA; I
B
= −5mA −−−130 mV
I
C
= −200 mA; I
B
= −10 mA −−−200 mV
I
C
= −500 mA; I
B
= −50 mA; note 1 −−−350 mV
R
CEsat
equivalent on-resistance I
C
= −500 mA; I
B
= −50 mA; note 1 − 440 <700 mΩ
V
BEsat
base-emitter saturation voltage I
C
= −500 mA; I
B
= −50 mA; note 1 −−−1.2 V
V
BEon
base-emitter turn-on voltage V
CE
= −2 V; I
C
= −100 mA; note 1 −−−1.1 V
f
T
transition frequency I
C
= −100 mA; V
CE
= −5V;
f = 100 MHz
100 300 − MHz
C
c
collector capacitance V
CB
= −10 V; I
E
=I
e
= 0; f = 1 MHz −−10 pF