Datasheet

2003 Aug 12 2
Philips Semiconductors Product specification
40 V, 0.5 A
PNP low V
CEsat
(BISS) transistor
PBSS3540M
FEATURES
• Low collector-emitter saturation voltage V
CEsat
• High collector current capability I
C
and I
CM
• High efficiency leading to reduced heat generation
• Reduced printed-circuit board requirements.
APPLICATIONS
• Power management:
– DC-DC converter
– Supply line switching
– Battery charger
– LCD backlighting.
• Peripheral driver:
– Driver in low supply voltage applications (e.g. lamps
and LEDs).
– Inductive load drivers (e.g. relays, buzzers and
motors).
DESCRIPTION
Low V
CEsat
PNP transistor in a SOT883 leadless ultra
small plastic package.
NPN complement: PBSS2540M.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
MAM469
2
1
3
Bottom view
2
3
1
Fig.1 Simplified outline (SOT883) and symbol.
MARKING
TYPE NUMBER MARKING CODE
PBSS3540M DA
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage −40 V
I
C
collector current (DC) −500 mA
I
CM
peak collector current −1A
R
CEsat
equivalent on-resistance <700 mΩ