Datasheet

2004 Dec 23 6
NXP Semiconductors Product data sheet
15 V low V
CE(sat)
PNP double transistor
PBSS3515VS
handbook, halfpage
10
3
10
2
10
1
10
−1
MLD654
−10
−1
−1 −10
I
C
(mA)
R
CEsat
(Ω)
−10
2
−10
3
(1)
(3)(2)
Fig.6 Equivalent on-resistance as a function of
collector current; typical values.
I
C
/I
B
= 20.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
handbook, halfpage
0
(1)
(2)(3)
(4)
(5)
(6)
(7)
(8)
(10)
I
C
(mA)
V
CE
(V)
−1200
−800
−400
0
−2 −10
−4 −6 −8
MLD650
(9)
Fig.7 Collector current as a function of
collector-emitter voltage; typical values.
(1) I
B
= −7 mA.
(2) I
B
= −6.3 mA.
(3) I
B
= −5.6 mA.
(4) I
B
= −4.9 mA.
(5) I
B
= −4.2 mA.
(6) I
B
= −3.5 mA.
(7) I
B
= −2.8 mA.
(8) I
B
= −2.1 mA.
(9) I
B
= −1.4 mA.
(10) I
B
= −0.7 mA.
T
amb
= 25 °C.