Datasheet
Table Of Contents

2004 Dec 23 4
NXP Semiconductors Product data sheet
15 V low V
CE(sat)
PNP double transistor
PBSS3515VS
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor unless otherwise specified
I
CBO
collector-base cut-off current V
CB
= −15 V; I
E
= 0 A − − −100 nA
V
CB
= −15 V; I
E
= 0 A; T
j
= 150 °C − − −50 μA
I
EBO
emitter-base cut-off current V
EB
= −5 V; I
C
= 0 A − − −100 nA
h
FE
DC current gain V
CE
= −2 V; I
C
= −10 mA 200 − −
V
CE
= −2 V; I
C
= −100 mA; note 1 150 − −
V
CE
= −2 V; I
C
= −500 mA; note 1 90 − −
V
CEsat
collector-emitter saturation
voltage
I
C
= −10 mA; I
B
= −0.5 mA − − −25 mV
I
C
= −200 mA; I
B
= −10 mA − − −150 mV
I
C
= −500 mA; I
B
= −50 mA; note 1 − − −250 mV
R
CEsat
equivalent on-resistance I
C
= −500 mA; I
B
= −50 mA; note 1 − 300 <500 mΩ
V
BEsat
base-emitter saturation voltage I
C
= −500 mA; I
B
= −50 mA; note 1 − − −1.1 V
V
BE
base-emitter turn-on voltage V
CE
= −2 V; I
C
= −100 mA; note 1 − − −0.9 V
f
T
transition frequency I
C
= −100 mA; V
CE
= −5 V;
f
= 100 MHz
100 280 − MHz
C
c
collector capacitance V
CB
= −10 V; I
E
= I
e
= 0 A; f = 1 MHz − − 10 pF