Datasheet

PBSS3515MB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 6 March 2012 7 of 12
NXP Semiconductors
PBSS3515MB
15 V, 0.5 A PNP low VCEsat (BISS) transistor
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
T
amb
= 25 °C
I
C
/I
B
= 20
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
(3) T
amb
= -55 °C
Fig 8. Collector current as a function of
collector-emitter voltage; typical values
Fig 9. Collector-emitter equivalent on-resistance as a
function of collector current; typical values
V
CE
(V)
0 -10-8-4 -6-2
006aac992
-0.4
-0.8
-1.2
I
C
(A)
0
I
B
(mA) = -7.0
-6.3
-5.6
-4.9
-4.2
-3.5
-2.8
-2.1
-1.4
-0.7
10
3
10
2
10
1
10
-1
mld670
-10
-1
-1 -10
I
C
(mA)
R
CEsat
(Ω)
-10
2
-10
3
(1)
(3)(2)