Datasheet

PBSS306PZ All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 26 July 2011 8 of 15
NXP Semiconductors
PBSS306PZ
100 V, 4.1 A PNP low VCEsat (BISS) transistor
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
T
amb
= 25 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
006aaa650
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
1
10
−1
10
2
10
10
3
R
CEsat
(Ω)
10
−2
(3)
(2)
(1)
006aaa652
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
1
10
−1
10
2
10
10
3
R
CEsat
(Ω)
10
−2
(3)
(2)
(1)