Datasheet

PBSS306PZ All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 26 July 2011 4 of 15
NXP Semiconductors
PBSS306PZ
100 V, 4.1 A PNP low VCEsat (BISS) transistor
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for collector 6 cm
2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa561
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
0
0.10
0.01
δ = 1
0.75
0.50
0.33
0.20
0.05
0.02
006aaa562
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
0.20
δ = 1
0.10
10
1
10
2
Z
th(j-a)
(K/W)
10
−1
0.05
0.01
0.02
0
0.75
0.50
0.33