Datasheet

PBSS306PZ All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 26 July 2011 3 of 15
NXP Semiconductors
PBSS306PZ
100 V, 4.1 A PNP low VCEsat (BISS) transistor
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
[3] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm
2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
006aaa560
T
amb
(°C)
−75 17512525 75−25
1.0
0.5
1.5
2.0
2.5
P
tot
(W)
0
(3)
(2)
(1)
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
- - 179 K/W
[2]
--74K/W
[3]
--63K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
--15K/W