Datasheet

PBSS306PZ All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 26 July 2011 2 of 15
NXP Semiconductors
PBSS306PZ
100 V, 4.1 A PNP low VCEsat (BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
[3] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 B base
SOT223 (SC-73)
2 C collector
3Eemitter
4 C collector
132
4
sym028
2, 4
3
1
Table 3. Ordering information
Type number Package
Name Description Version
PBSS306PZ SC-73 plastic surface-mounted package with increased heatsink;
4 leads
SOT223
Table 4. Marking codes
Type number Marking code
PBSS306PZ S306PZ
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - -100 V
V
CEO
collector-emitter voltage open base - -100 V
V
EBO
emitter-base voltage open collector - -5 V
I
C
collector current - -4.1 A
I
CM
peak collector current single pulse; t
p
≤ 1ms - -8.2 A
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
-0.7W
[2]
-1.7W
[3]
-2W
T
j
junction temperature - 150 °C
T
amb
ambient temperature -65 150 °C
T
stg
storage temperature -65 150 °C