Datasheet

PBSS306NX_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 8 December 2009 6 of 15
NXP Semiconductors
PBSS306NX
100 V, 4.5 A NPN low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
=80V; I
E
= 0 A - - 100 nA
V
CB
=80V; I
E
=0A;
T
j
= 150 °C
-- 50μA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=2V; I
C
=0.5A
[1]
200 330 -
V
CE
=2V; I
C
=1A
[1]
150 270 -
V
CE
=2V; I
C
=2A
[1]
100 175 -
V
CE
=2V; I
C
=4A
[1]
50 85 -
V
CE
=2V; I
C
=5A
[1]
40 70 -
V
CEsat
collector-emitter
saturation voltage
I
C
= 0.5 A; I
B
=50mA
[1]
-2740mV
I
C
=1A; I
B
=50mA
[1]
-5375mV
I
C
=1A; I
B
=10mA
[1]
- 100 150 mV
I
C
=2A; I
B
=40mA
[1]
- 115 160 mV
I
C
=4A; I
B
= 200 mA
[1]
- 160 225 mV
I
C
=4A; I
B
= 400 mA
[1]
- 140 200 mV
I
C
= 4.5 A; I
B
= 225 mA
[1]
- 170 245 mV
R
CEsat
collector-emitter
saturation resistance
I
C
=4A; I
B
= 200 mA
[1]
-4056mΩ
V
BEsat
base-emitter saturation
voltage
I
C
=1A; I
B
= 100 mA
[1]
- 0.81 0.9 V
I
C
=4A; I
B
= 400 mA
[1]
- 0.94 1.05 V
V
BEon
base-emitter turn-on
voltage
V
CE
=2V; I
C
=2A
[1]
- 0.78 0.85 V
t
d
delay time V
CC
= 12.5 V; I
C
=3A;
I
Bon
= 0.15 A;
I
Boff
= −0.15 A
-15- ns
t
r
rise time - 315 - ns
t
on
turn-on time - 330 - ns
t
s
storage time - 240 - ns
t
f
fall time - 290 - ns
t
off
turn-off time - 530 - ns
f
T
transition frequency V
CE
=10V; I
C
= 100 mA;
f=100MHz
-110- MHz
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
-2340pF