Datasheet

PBSS306NX_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 8 December 2009 2 of 15
NXP Semiconductors
PBSS306NX
100 V, 4.5 A NPN low V
CEsat
(BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 2. Pinning
Pin Description Simplified outline Symbol
1emitter
2 collector
3base
321
sym04
2
1
2
3
Table 3. Ordering information
Type number Package
Name Description Version
PBSS306NX SC-62 plastic surface-mounted package; collector pad for good
heat transfer; 3 leads
SOT89
Table 4. Marking codes
Type number Marking code
[1]
PBSS306NX *5G