Datasheet

PBSS305PZ_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 8 December 2009 6 of 14
NXP Semiconductors
PBSS305PZ
80 V, 4.5 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −80 V; I
E
=0A - - −100 nA
V
CB
= −80 V; I
E
=0A;
T
j
=150°C
-- −50 μA
I
EBO
emitter-base cut-off
current
V
EB
= −5V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −2V; I
C
= −0.5 A
[1]
200 280 -
V
CE
= −2V; I
C
= −1A
[1]
150 240 -
V
CE
= −2V; I
C
= −2A
[1]
120 190 -
V
CE
= −2V; I
C
= −4A
[1]
60 100 -
V
CE
= −2V; I
C
= −6A
[1]
30 45 -
V
CEsat
collector-emitter
saturation voltage
I
C
= −0.5 A; I
B
= −50 mA
[1]
- −36 −50 mV
I
C
= −1A; I
B
= −50 mA
[1]
- −70 −100 mV
I
C
= −1A; I
B
= −10 mA
[1]
- −180 −260 mV
I
C
= −2A; I
B
= −40 mA
[1]
- −200 −280 mV
I
C
= −4A; I
B
= −200 mA
[1]
- −245 −345 mV
I
C
= −4A; I
B
= −400 mA
[1]
- −180 −245 mV
I
C
= −4.5 A; I
B
= −225 mA
[1]
- −310 −450 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −2A; I
B
= −40 mA
[1]
- 100 140 mΩ
I
C
= −4A; I
B
= −200 mA
[1]
-6187mΩ
I
C
= −4A; I
B
= −400 mA
[1]
-4463mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= −1A; I
B
= −100 mA
[1]
- −0.81 −0.9 V
I
C
= −4A; I
B
= −400 mA
[1]
- −0.93 −1.05 V
V
BEon
base-emitter turn-on
voltage
V
CE
= −2V; I
C
= −2A
[1]
- −0.78 −0.85 V
t
d
delay time V
CC
= −12.5 V; I
C
= −3A;
I
Bon
= −0.15 A;
I
Boff
=0.15A
-15- ns
t
r
rise time - 85 - ns
t
on
turn-on time - 100 - ns
t
s
storage time - 185 - ns
t
f
fall time - 100 - ns
t
off
turn-off time - 285 - ns
f
T
transition frequency V
CE
= −10 V; I
C
= −100 mA;
f = 100 MHz
-100- MHz
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f=1MHz
-6590pF