Datasheet

PBSS305PD_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 8 December 2009 7 of 15
NXP Semiconductors
PBSS305PD
100 V, 2 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −100 V; I
E
=0A - - −100 nA
V
CB
= −100 V; I
E
=0A;
T
j
=150°C
--−50 μA
I
CES
collector-emitter
cut-off current
V
CE
= −80 V; V
BE
=0V - - −100 nA
I
EBO
emitter-base cut-off
current
V
EB
= −5V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −2V; I
C
= −500 mA 175 275 -
V
CE
= −2V; I
C
= −1A
[1]
145 225 -
V
CE
= −2V; I
C
= −2A
[1]
55 75 -
V
CE
= −2V; I
C
= −3A
[1]
20 30 -
V
CEsat
collector-emitter
saturation voltage
I
C
= −500 mA; I
B
= −50 mA - −65 −90 mV
I
C
= −1A; I
B
= −50 mA - −130 −185 mV
I
C
= −2A; I
B
= −200 mA
[1]
- −175 −250 mV
I
C
= −3A; I
B
= −300 mA
[1]
- −275 −395 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −2A; I
B
= −200 mA
[1]
- 88 125 mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= −500 mA; I
B
= −50 mA - −0.80 −0.85 V
I
C
= −1A; I
B
= −50 mA - −0.82 −0.88 V
I
C
= −1A; I
B
= −100 mA
[1]
- −0.84 −0.90 V
I
C
= −3A; I
B
= −300 mA
[1]
- −0.95 −1.01 V
V
BEon
base-emitter turn-on
voltage
V
CE
= −2V; I
C
= −2A - −0.83 −1.00 V
t
d
delay time V
CC
= −9.2 V; I
C
= −2A;
I
Bon
= −0.1 A; I
Boff
=0.1A
-13-ns
t
r
rise time - 197 - ns
t
on
turn-on time - 210 - ns
t
s
storage time - 169 - ns
t
f
fall time - 197 - ns
t
off
turn-off time - 366 - ns
f
T
transition frequency V
CE
= −10 V; I
C
= −100 mA;
f=100MHz
-110-MHz
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f=1MHz
-36-pF