Datasheet

PBSS304PD_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 March 2009 7 of 15
NXP Semiconductors
PBSS304PD
80 V, 3 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −80 V; I
E
=0A - - −100 nA
V
CB
= −80 V; I
E
=0A;
T
j
= 150 °C
--−50 µA
I
CES
collector-emitter
cut-off current
V
CE
= −64 V; V
BE
=0V - - −100 nA
I
EBO
emitter-base cut-off
current
V
EB
= −5 V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −2 V; I
C
= −500 mA 155 225 -
V
CE
= −2 V; I
C
= −1A
[1]
140 200 -
V
CE
= −2 V; I
C
= −2A
[1]
105 145 -
V
CE
= −2 V; I
C
= −3A
[1]
60 85 -
V
CE
= −2 V; I
C
= −4A
[1]
30 45 -
V
CE
= −2 V; I
C
= −5A
[1]
20 25 -
V
CEsat
collector-emitter
saturation voltage
I
C
= −500 mA; I
B
= −50 mA - −55 −75 mV
I
C
= −1 A; I
B
= −50 mA - −110 −145 mV
I
C
= −2 A; I
B
= −200 mA
[1]
- −150 −200 mV
I
C
= −3 A; I
B
= −150 mA
[1]
- −315 −415 mV
I
C
= −3 A; I
B
= −300 mA
[1]
- −215 −290 mV
I
C
= −4 A; I
B
= −400 mA
[1]
- −295 −390 mV
I
C
= −5 A; I
B
= −500 mA
[1]
- −410 −540 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −2 A; I
B
= −200 mA
[1]
- 75 100 mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= −500 mA; I
B
= −50 mA - −0.78 −0.87 V
I
C
= −1 A; I
B
= −50 mA - −0.80 −0.89 V
I
C
= −1 A; I
B
= −100 mA
[1]
- −0.83 −0.91 V
I
C
= −3 A; I
B
= −150 mA
[1]
- −0.92 −0.99 V
I
C
= −3 A; I
B
= −300 mA
[1]
- −0.94 −1.01 V
V
BEon
base-emitter turn-on
voltage
V
CE
= −2 V; I
C
= −2A - −0.80 −1.00 V
t
d
delay time V
CC
= −9.2 V; I
C
= −2A;
I
Bon
= −0.1 A; I
Boff
= 0.1 A
-13-ns
t
r
rise time - 77 - ns
t
on
turn-on time - 90 - ns
t
s
storage time - 210 - ns
t
f
fall time - 102 - ns
t
off
turn-off time - 312 - ns
f
T
transition frequency V
CE
= −10 V; I
C
= −100 mA;
f = 100 MHz
- 110 - MHz
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f=1MHz
-45-pF