Datasheet

PBSS304NX_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 November 2009 6 of 15
NXP Semiconductors
PBSS304NX
60 V, 4.7 A NPN low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
=60V; I
E
= 0 A - - 100 nA
V
CB
=60V; I
E
=0A;
T
j
= 150 °C
-- 50μA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=2V; I
C
=0.5A
[1]
300 520 -
V
CE
=2V; I
C
=1A
[1]
300 500 -
V
CE
=2V; I
C
=2A
[1]
250 470 -
V
CE
=2V; I
C
=4A
[1]
150 250 -
V
CE
=2V; I
C
=6A
[1]
75 115 -
V
CEsat
collector-emitter
saturation voltage
I
C
= 0.5 A; I
B
=50mA
[1]
-2535mV
I
C
=1A; I
B
=50mA
[1]
-5070mV
I
C
=1A; I
B
=10mA
[1]
-85120mV
I
C
=2A; I
B
=40mA
[1]
- 105 150 mV
I
C
=4A; I
B
= 200 mA
[1]
- 145 210 mV
I
C
=4A; I
B
= 400 mA
[1]
- 140 200 mV
I
C
=4A; I
B
=80mA
[1]
- 190 290 mV
I
C
= 4.7 A; I
B
= 235 mA
[1]
- 170 245 mV
R
CEsat
collector-emitter
saturation resistance
I
C
=4A; I
B
= 200 mA
[1]
-3753mΩ
I
C
=4A; I
B
=80mA
[1]
-4873mΩ
V
BEsat
base-emitter saturation
voltage
I
C
=1A; I
B
= 100 mA
[1]
- 0.82 0.9 V
I
C
=4A; I
B
= 400 mA
[1]
- 0.94 1.05 V
V
BEon
base-emitter turn-on
voltage
V
CE
=2V; I
C
=2A
[1]
- 0.75 0.85 V
t
d
delay time V
CC
= 12.5 V; I
C
=3A;
I
Bon
= 0.15 A;
I
Boff
= −0.15 A
-15- ns
t
r
rise time - 95 - ns
t
on
turn-on time - 110 - ns
t
s
storage time - 360 - ns
t
f
fall time - 195 - ns
t
off
turn-off time - 555 - ns
f
T
transition frequency V
CE
=10V; I
C
= 100 mA;
f=100MHz
- 130 - MHz
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
-4870pF