Datasheet

PBSS303PZ_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 November 2009 6 of 14
NXP Semiconductors
PBSS303PZ
30 V, 5.3 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −30 V; I
E
=0A - - −100 nA
V
CB
= −30 V; I
E
=0A;
T
j
=150°C
--−50 μA
I
EBO
emitter-base cut-off
current
V
EB
= −5V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −2V; I
C
= −0.5 A
[1]
250 400 -
V
CE
= −2V; I
C
= −1A
[1]
250 350 -
V
CE
= −2V; I
C
= −2A
[1]
200 300 -
V
CE
= −2V; I
C
= −4A
[1]
130 200 -
V
CE
= −2V; I
C
= −7A
[1]
80 120 -
V
CEsat
collector-emitter
saturation voltage
I
C
= −0.5 A; I
B
= −50 mA
[1]
- −25 −35 mV
I
C
= −1A; I
B
= −50 mA
[1]
- −50 −70 mV
I
C
= −1A; I
B
= −10 mA
[1]
- −75 −105 mV
I
C
= −2A; I
B
= −40 mA
[1]
- −100 −140 mV
I
C
= −4A; I
B
= −200 mA
[1]
- −145 −210 mV
I
C
= −4A; I
B
= −400 mA
[1]
- −135 −190 mV
I
C
= −4A; I
B
= −40 mA
[1]
- −245 −370 mV
I
C
= −5.3 A; I
B
= −265 mA
[1]
- −185 −265 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −4A; I
B
= −200 mA
[1]
-3653mΩ
I
C
= −4A; I
B
= −40 mA
[1]
-6192mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= −1A; I
B
= −100 mA
[1]
- −0.82 −0.9 V
I
C
= −4A; I
B
= −400 mA
[1]
- −0.93 −1.05 V
V
BEon
base-emitter turn-on
voltage
V
CE
= −2V; I
C
= −2A
[1]
- −0.76 −0.85 V
t
d
delay time V
CC
= −12.5 V; I
C
= −3A;
I
Bon
= −0.15 A;
I
Boff
=0.15A
-15-ns
t
r
rise time - 55 - ns
t
on
turn-on time - 70 - ns
t
s
storage time - 215 - ns
t
f
fall time - 105 - ns
t
off
turn-off time - 320 - ns
f
T
transition frequency V
CE
= −10 V; I
C
= −100 mA;
f=100MHz
-130-MHz
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f=1MHz
- 110 160 pF